Gain Microwave has established a design and test centre within the Industry Partnership Facility located in the National Research Council's Montreal Road, Ottawa campus. Gain's co-location with its gallium nitride foundry partner will facilitate closer co-operation between Gain's design and development teams and the foundry operations and process development teams.
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Gain Microwave is a leading innovator in the development and application of gallium nitride (GaN) MMIC technology. Gallium nitride's superior high frequency, high power and high temperature material properties, together with its inherent robustness, result in highly differentiated device performance compared to conventional silicon and other III-V compound semiconductor technologies. Gain's GaN RF devices and MMICs deliver superior solutions across a broad range of applications and markets.
Gain Microwave delivers the industry's most comprehensive GaN component solutions, from concept through to design, manufacture, test and supply of advanced components for RF power and robust RF applications, by combining an exceptional expertise in advanced III-V MMIC technology, design and test, with the backing of a world-class wafer fabrication facility.